Visible and 1.54 μm Emission From Amorphous Silicon Nitride Films by Reactive Cosputtering
نویسندگان
چکیده
In this paper, we present our main results on the structural and optical properties of light-emitting amorphous silicon nitride (SiNx) films fabricated by reactive magnetron cosputtering. In particular, we discuss the origin of the visible emission in amorphous silicon nitride films and investigate the optical emission properties of Erbium-doped amorphous silicon nitride (Er:SiNx). The mechanisms of Er excitation and de-excitation in Er:SiNx are discussed in relation to the engineering of efficient light sources at 1.54 μm for on-chip nanophotonics applications. These results suggest that Er-doped amorphous silicon nitride films have a large potential for the fabrication of optically active photonic devices based on the Si technology.
منابع مشابه
Temperature dependence of the energy transfer from amorphous silicon nitride to Er ions
The 1.54 m photoluminescence and decay time of Er-doped amorphous silicon nitride films with different Si concentrations are studied in the temperature range of 4 to 320 K. The temperature quenching of the Er emission lifetime demonstrates the presence of nonradiative trap centers due to excess Si in the films. The temperature dependence and the dynamics of the energy coupling between amorphous...
متن کاملCathodoluminescence from Amorphous and Nanocrystalline Nitride Thin Films Doped with Rare Earth and Transition Metals
Rare earth (RE) ion luminescence has long been used in laser and optical fiber communications technology. Bulk RE doped oxides were widely used in color phosphors for Cathode Ray Tubes. The wide band gap (WBG) semiconductors and insulators have been used for visible emission at 300 K from RE ions since the reports first by Zanata (Zanatta and Nunes 1998) for Er in silicon nitride (photoluminesc...
متن کاملEnergy transfer and 1.54 m emission in amorphous silicon nitride films
S. Yerci, R. Li, S. O. Kucheyev, T. van Buuren, S. N. Basu, and L. Dal Negro Department of Electrical and Computer Engineering, Boston University, 8 Saint Mary’s Street, Boston, Massachusetts 02215–2421, USA Lawrence Livermore National Laboratory, Livermore, California 94551, USA Division of Materials Science and Engineering, Boston University, 15 Saint Mary’s Street, Brookline, Massachusetts 0...
متن کاملEnergy transfer and stimulated emission dynamics at 1.1 μm in Nd-doped SiNx.
Neodymium (Nd) doped amorphous silicon nitride films with various Si concentrations (Nd:SiNx) were fabricated by reactive magnetron co-sputtering followed by thermal annealing. The time dynamics of the energy transfer in Nd:SiNx was investigated, a systematic optimization of its 1.1 μm emission was performed, and the Nd excitation cross section in SiNx was measured. An active Nd:SiNx micro-disk...
متن کاملPreparation and Characterization of Aluminum Nitride Thin Films with the Potential Application in Electro-Acoustic Devices
In this work, aluminum nitride (AlN) thin films with different thicknesses were deposited on quartz and silicon substrates using single ion beam sputtering technique. The physical and chemical properties of prepared films were investigated by different characterization technique. X-ray diffraction (XRD) spectra revealed that all of the deposited films have an amorphous str...
متن کامل